View STM6924_4408760.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Green Product
STM6924
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
40V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
ID
6.8A
RDS(ON) (m) Max
28 @ VGS=10V 46 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
a
Limit 40 20 TA=25C TA=70C
d
Units V V A A A mJ W W C
6.8 5.4 25 18
-Pulsed b Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25C TA=70C
2 1.28 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
62.5
C/W
Details are subject to change without notice.
Nov,07,2008
1
www.samhop.com.tw
STM6924
Ver 1.0
ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=32V , VGS=0V
Min 40
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
VGS= 20V , VDS=0V
1 100
uA nA
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=6.8A VGS=4.5V , ID=5.3A VDS=5V , ID=6.8A
1
1.8 23 35 12
3 28 46
V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC
DYNAMIC CHARACTERISTICS CISS COSS CRSS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
c
VDS=20V,VGS=0V f=1.0MHz
825 80 64 15.5 13.5 17 18 13 6.5 2 3.6 1.7 0.78 1.3
SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=20V ID=1A VGS=10V RGEN=3.3ohm VDS=20V,ID=6.8A,VGS=10V VDS=20V,ID=6.8A,VGS=4.5V VDS=20V,ID=6.8A, VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD VGS=0V,IS=1.7A Diode Forward Voltage b
A V
Notes
_ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)
Nov,07,2008
2
www.samhop.com.tw
STM6924
Ver 1.0
30 VGS=4.5V 20 VGS=10V VGS=4V 18 VGS=3.5V
ID, Drain Current(A)
ID, Drain Current(A)
24
15
10 25 C 5 Tj=125 C -55 C 0
12
VGS=3V
6 VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60 50 40 30 20 10 1 VGS=10V VGS=4.5V
Figure 2. Transfer Characteristics
1.5
RDS(on), On-Resistance Normalized
1.4 1.3 1.2 1.1 1.0 0.0
VGS=10V ID=6.8A VGS=4.5V ID=5.3A
RDS(on)(m )
1
6
12
18
24
30
0
25
50
75
100
125
150
T j ( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75
VDS=VGS ID=250uA
100 125 150
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation with Temperature 3
Figure 6. Breakdown Voltage Variation with Temperature
Nov,07,2008
www.samhop.com.tw
STM6924
Ver 1.0
72 60 20.0
Is, Source-drain current(A)
ID=6.8A
10.0
25 C
RDS(on)(m )
48 36 25 C 24 12 0
75 C 125 C
5.0 125 C 75 C
0
2
4
6
8
10
1.0
0.2
0.5
0.8
1.1
1.4
1.7
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
1080 900 Ciss
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VGS, Gate to Source Voltage(V)
C, Capacitance(pF)
8 6 4 2 0 0
VDS=20V ID=6.8A
720 540 360 180 Crss 0 0 5 10 15 20 25 30
Coss
2
4
6
8
10
12
14 16
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80 100
it
10 0u
ID, Drain Current(A)
10
RD
Switching Time(ns)
ON S(
)L
im
1m
s
TD(off )
Tf
Tr TD(on)
10
10
s
1
0m
ms
DC
s
10
0.1 0.03 1 3 10 100 0.1
VGS=10V Single Pulse TA=25 C
1 10 40
Rg, Gate Resistance()
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,07,2008
4
www.samhop.com.tw
STM6924
Ver 1.0
15V
V ( BR )D S S
tp
VDS
L
D R IVE R
RG
20V
D .U .T
IA S tp
+ - VD D
A
0.0 1
IAS
Unclamped Inductive Test Circuit F igure 13a.
Unclamped Inductive Waveforms F igure 13b.
10
Normalized Transient Thermal Resistance
1
0.5 0.2 0.1 P DM 0.05
0.1
0.02 0.01
t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
Nov,07,2008
5
www.samhop.com.tw
STM6924
Ver 1.0
PACKAGE OUTLINE DIMENSIONS SO-8
1 L
E D
0.015X45
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0
SO-8 package weight
INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
MAX 1.75 0.25 4.98 3.99 6.20 1.27 8
0.083g
Notes
Nov,07,2008
6
www.samhop.com.tw
STM6924
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1 D1 P2
A
E1 E2
B0
A0
D0
P0
A
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:
PACKAGE SOP 8N 150 A0
6.50 0.15
B0
5.25 0.10
K0
2.10 0.10
D0
1.5 (MIN)
D1
1.55 0.10
E
12.0 +0.3 - 0.1
E1
1.75 0.10
E2
5.5 0.10
E
P0
8.0 0.10
P1
4.0 0.10
P2
2.0 0.10
T
0.30 0.013
SO-8 Reel
W1
S G N
R H W
UNIT:
V
M
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
K V
Nov,07,2008
7
www.samhop.com.tw

▲Up To Search▲

Price & Availability of STM6924

	To Download STM6924 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .